STB7NB40 n - channel enhancement mode powermesh ? mosfet preliminary data n typical r ds(on) = 0.75 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n for through-hole version contact sales office description using the latest high voltage technology, sgs-thomson has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the company's proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. internal schematic diagram absolute maximum ratings symbol parameter value unit STB7NB40 v ds drain-source voltage (v gs =0) 400 v v dgr drain- gate voltage (r gs =20k w ) 400 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c7a i d drain current (continuous) at t c =100 o c4.4a i dm ( ? ) drain current (pulsed) 28 a p tot total dissipation at t c =25 o c100w derating factor 0.8 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4.5 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 7a, di/dt 200 a/ m s, v dd v (br)dss ,tj t jmax october 1997 type v dss r ds(on) i d STB7NB40 400 v < 0.9 w 7.0 a 1 3 d 2 pak to-263 (suffix ot4o)
thermal data r thj-case thermal resistance junction-case max 1.25 o c/w r t hj- amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 7a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 300 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 400 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds = max rating x 0.8 t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 3.5 a 0.75 0.9 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =3.5a 2.5 4.2 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 705 132 17 720 175 25 pf pf pf STB7NB40 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =200v i d =3.5a r g =47 w v gs =10v (see test circuit, figure 3) 11.5 7.5 16 11 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =320v i d =7a v gs =10v 21 7.3 8.5 30 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =320v i d =7a r g =4.7 w v gs =10v (see test circuit, figure 5) 9.5 9 16.5 15 14 25 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 7 28 a a v sd ( * ) forward on voltage i sd =7a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a di/dt = 100 a/ m s v dd =100v t j =150 o c (see test circuit, figure 5) 300 2 13.7 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area STB7NB40 3/6
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STB7NB40 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 p011p6/c to-263 (d2pak) mechanical data STB7NB40 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada- china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... STB7NB40 6/6
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